Silicon carbide
Properties
| Formula | SiC |
| Variants | 3C:Ga,N, 3C:N, 4H, Ga doped, 6H, 3C, Ga doped, 4H, 6H:In,N, 6H, Ga doped, beta, 6H:Al,N, 21R, Ga doped, 3C, 15R:B,N, amorphous film, 6H:N, 21R:B,N, 4H:B,N, 33R:B,N, alpha, 6H:B,N, 6H:Ga,N, 3C:B,N |
| Member | Moissanite |
| Luminescence emitters | Al, B, Band-band recombination, Be, Defect, Ga, Impurity, N, N-Al DAP, N-B DAP, Sc, Unspecified |
| Search other databases | webmineral.com, mindat.org, rruf.info, mineralienatlas.de, Handbook of Mineralogy, American Mineralogist Crystal Structure Database |
| Related materials | Silicon carbide, 3C, Silicon carbide, 6H |
| Crystal symmetry | Cubic, Point group 43m, Space group F43m (#216), Hexagonal, Point group 6mm, Space group P63mc (#186), Trigonal, Point group 3m, Space group R3m (#160) |
| Tags | Compound, Synthetic , Carbide |
Composition
| Element | Atoms |
|---|---|
| Si | 1 |
| C | 1 |
| Total: | 2 |